Use of megagauss fields for solid state physics investigations "Kapitsa" series in Sarov

Summary form only given, as follows. Movement to the area of limiting magnetic fields opens unique possibilities for new effects searching. This also requires high resources, limiting implementation of ultra-high magnetic fields into experimental practice. A maximum magnetic field of 2800 T was obtained in the laboratory of ultra-high magnetic fields of RFNC, Sarov. Earlier this laboratory was classified, but in 1997 the decision was made to open the unique bases for Russian and foreign scientists access. During this period we performed 4 International Scientific and Practical Conferences "Kapitsa". Great work was done on magnetic susceptibility measurement and determination of magnetic phase transitions of the 1st order in highly correlated systems: LaCoO/sub 3/, LaMnO/sub 3/, (LaSrCa)/sub 14/Cu/sub 24/O/sub 41/, YNi/sub 5-x/Cu/sub x/, semiconductors: HgSe:Fe, FeSi, high-spin metalloorganic clusters: Mn/sub 12/, Mn/sub 6/, Fe/sub 8/ and Fe/sub 10/, V/sub 15/. High-spin clusters are of great importance in connection with the development of magnetic media of information storage and recording. Recorded jumps on the magnetization curve confirm the quantum character of the magnetic moments reorientation in nanodimensional clusters. The recorded first order phase transition semiconductor-metal in FeSi was also confirmed by the conductivity measurements data. The conductivity measurement method in the microwave field using dielectric waveguides was used in "Kapitsa-4" experiments for quantum limit measurement in organic metals. This experiment showed the perspective of application of dielectric waveguides in MC-generators. Cyclotron resonance is one of the perspective methods of semiconductors fundamental parameters investigations. Cyclotron resonance measurements in the semiconductors GaN and GaAs on the wavelength of 10 mm were performed in the Experimental Series "Kapitsa-3" and "Kapitsa-4". Interband valence transitions in GaN were recorded in the fields of 90, 270 a- d 410 T. In GaAs resonance were observed in the fields of 100 and 500 T. The decrease of the transmission coefficient was recorded in the field of /spl sim/900 T. This could be associated with the carriers mass change at crossover of the G and L dots state.