Title :
Measurements of statistical lag time of breakdown in thin amorphous layers of SiO2
Author :
Vainer, B.G. ; Kupershtokh, A.L.
Author_Institution :
Inst. of Semicond. Phys., Acad. of Sci., Novosibirsk, Russia
Abstract :
An experimental investigation of breakdown in metal-oxide-semiconductor (MOS) structures was performed. It is suggested that the theoretical approaches developed for liquid dielectrics be used for breakdown of thin amorphous solid-state films. The solid amorphous dielectric layers are shown to be a good model system to test ionization mechanisms of liquid breakdown
Keywords :
MIS structures; amorphous state; dielectric thin films; electric breakdown; silicon compounds; MOS structure; SiO2; amorphous dielectric layer; breakdown; ionization; liquid dielectric; solid-state film; statistical lag time; Amorphous materials; Dielectric breakdown; Dielectric liquids; Dielectric measurements; Dielectric thin films; Electric breakdown; Solid modeling; Solid state circuits; System testing; Time measurement;
Conference_Titel :
Electrical Insulation, 1998. Conference Record of the 1998 IEEE International Symposium on
Conference_Location :
Arlington, VA
Print_ISBN :
0-7803-4927-X
DOI :
10.1109/ELINSL.1998.704689
