Analysis of CNT based 3D TSV for emerging RF applications

This paper presents an analysis of CNT-based 3D TSV for emerging 60 GHz applications such as military communications, high-frequency acoustics and other high-end wireless applications. An integrated model of CNT-based TSV is developed taking into consideration substrate parasitics, which have been appropriately modeled as a monolithic capacitor. The Effective Series Resistance (ESR) and Effective Series Inductance (ESL) for the substrate are calculated using the resonant line technique, which is used to evaluate loss in reactive components at high frequencies. Case studies using different via dimensions, density of CNT bundles, and CNT diameters were carried out. For the optimized case it was observed that the reflection loss incurred is very low and output port transmission is quite high as compared with conventional Cu-based TSV interconnects. Eye diagram analysis and TDR measurements indicated low distortion and high transmission along with high throughput.