Title :
Tradeoff between CE and CB SiGe HBTs for Power Amplification in Terms of Frequency-Dependent Linearity and Power-Gain Characteristics
Author :
Qin, Guoxuan ; Wang, Guogong ; Jiang, Ningyue ; Ma, Zhenqiang
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI
Abstract :
The tradeoff between common-emitter (CE) and common-base (CB) SiGe HBTs for power amplification in terms of frequency-dependent linearity and power-gain characteristics is investigated. When both CE the CB HBTs are impedance-matched for maximum output power (Pout), the CB configuration exhibits higher power gain, however, with higher third-order intermodulation distortion (IMD3) than that of the CE configuration at high operation frequencies. At low operation frequencies, the CE configuration can exhibit the superiority on both power gain and IMD3 characteristics. New analytical expressions for IMD3 are derived and experimentally verified for the study of the frequency-dependent linearity characteristics of different configurations
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; intermodulation distortion; SiGe; common-base HBT; common-emitter HBT; frequency-dependent linearity; heterojunction bipolar transistor; impedance-matching; power amplification; power-gain characteristics; third-order intermodulation distortion; Drives; Frequency dependence; Germanium silicon alloys; Impedance matching; Intermodulation distortion; Linearity; Power engineering and energy; Power generation; Radio frequency; Silicon germanium; Common-base (CB); HBT; IMD3; SiGe; common-emitter (CE); frequency; intermodulation; linearity; power gain;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on
Conference_Location :
Long Beach, CA
Print_ISBN :
0-7803-9765-7
Electronic_ISBN :
0-7803-9765-7
DOI :
10.1109/SMIC.2007.322755
