DocumentCode
1734254
Title
A Research about the Temperature Compensation of Hall Sensor
Author
Feng, Wang ; Dong, Mi ; Zhangsui, Xu
Author_Institution
Department of Electric Engineering, Mechanical Engineering College, Shijiazhuang 050003 China
fYear
2007
Abstract
Hall sensor is made based on Hall effect. Because of electric field, semiconductor interior conducts. When exterior magnetic field exists, Lorentz force compels originally directional moved electron excursing and electron accumulates on one side of semiconductor. An electromotive force which is called Hall electromotive force comes into being. According to the theory, measuring magnetic can be realized. But the conductance and excursion trait of semiconductor are affected easily by the temperature. The inner resistance and the output of Hall sensor change along with the change of the temperature. The article studies the temperature character of Hall sensor. At the same time, design and use temperature compensation circuit to reduce the temperature influence, which can make the output more precise.
Keywords
Hall effect devices; compensation; sensors; Hall effect; Hall electromotive force; Hall sensor; Lorentz force; electric field; exterior magnetic field; magnetic field; temperature characteristics; temperature compensation; temperature influence; Circuits; Electrical resistance measurement; Electrons; Force sensors; Hall effect; Lorentz covariance; Magnetic field measurement; Magnetic semiconductors; Magnetic sensors; Temperature sensors; hall sensor; magnetic field; temperature compensation;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Measurement and Instruments, 2007. ICEMI '07. 8th International Conference on
Conference_Location
Xi´an
Print_ISBN
978-1-4244-1136-8
Electronic_ISBN
978-1-4244-1136-8
Type
conf
DOI
10.1109/ICEMI.2007.4351100
Filename
4351100
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