• DocumentCode
    1734254
  • Title

    A Research about the Temperature Compensation of Hall Sensor

  • Author

    Feng, Wang ; Dong, Mi ; Zhangsui, Xu

  • Author_Institution
    Department of Electric Engineering, Mechanical Engineering College, Shijiazhuang 050003 China
  • fYear
    2007
  • Abstract
    Hall sensor is made based on Hall effect. Because of electric field, semiconductor interior conducts. When exterior magnetic field exists, Lorentz force compels originally directional moved electron excursing and electron accumulates on one side of semiconductor. An electromotive force which is called Hall electromotive force comes into being. According to the theory, measuring magnetic can be realized. But the conductance and excursion trait of semiconductor are affected easily by the temperature. The inner resistance and the output of Hall sensor change along with the change of the temperature. The article studies the temperature character of Hall sensor. At the same time, design and use temperature compensation circuit to reduce the temperature influence, which can make the output more precise.
  • Keywords
    Hall effect devices; compensation; sensors; Hall effect; Hall electromotive force; Hall sensor; Lorentz force; electric field; exterior magnetic field; magnetic field; temperature characteristics; temperature compensation; temperature influence; Circuits; Electrical resistance measurement; Electrons; Force sensors; Hall effect; Lorentz covariance; Magnetic field measurement; Magnetic semiconductors; Magnetic sensors; Temperature sensors; hall sensor; magnetic field; temperature compensation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Measurement and Instruments, 2007. ICEMI '07. 8th International Conference on
  • Conference_Location
    Xi´an
  • Print_ISBN
    978-1-4244-1136-8
  • Electronic_ISBN
    978-1-4244-1136-8
  • Type

    conf

  • DOI
    10.1109/ICEMI.2007.4351100
  • Filename
    4351100