Title :
Performance and Modeling of Si and SiGe for Power Amplifiers
Author_Institution :
Skyworks Solutions Inc., Newbury Park, CA
Abstract :
There have been many demonstrations of Si and SiGe power amplifers (PAs) that have achieved good published performance. However, penetration of these technologies into the mainstream handset power amplifier market has been limited. In this paper, we review some of the state-of-the-art PA results in these technologies and discuss the performance challenges for silicon-based PAs. We also discuss some important on-going technology developments that may make these technologies more competitive for future applications. Finally, we present and discuss some power amplifer specific modeling issues that are not generally addressed in foundry offerings/design kits
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; UHF power amplifiers; integrated circuit modelling; mobile handsets; semiconductor technology; silicon; Si; SiGe; handset power amplifier; power amplifer modeling; state-of-the-art PA; technology developments; BiCMOS integrated circuits; Foundries; GSM; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Multiaccess communication; Power amplifiers; Silicon germanium; Telephone sets; HBT; Modeling; Power Amplifiers; Si; SiGe;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on
Conference_Location :
Long Beach, CA
Print_ISBN :
0-7803-9765-7
Electronic_ISBN :
0-7803-9765-7
DOI :
10.1109/SMIC.2007.322758
