Title :
High-Speed SiGe BiCMOS Technologies: 120-nm Status and End-of-Roadmap Challenges
Author :
Chevalier, P. ; Barbalat, B. ; Laurens, M. ; Vandelle, B. ; Rubaldo, L. ; Geynet, B. ; Voinigescu, S.P. ; Dickson, T.O. ; Zerounian, N. ; Chouteau, S. ; Dutartre, D. ; Monroy, A. ; Aniel, F. ; Dambrine, G. ; Chantre, A.
Author_Institution :
STMicroelectron., Crolles
Abstract :
This paper presents the status of high-speed SiGe BiCMOS technologies at STMicroelectronics. Process and electrical characteristics of two 120-nm platforms, qualified or under development, are presented together with results demonstrated on optical and millimeter-wave circuits. Advanced developments addressing end-of-roadmap BiCMOS are also presented and discussed
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MIMIC; heterojunction bipolar transistors; high-speed integrated circuits; 120 nm; BiCMOS technologies; SiGe; heterojunction bipolar transistors; high-speed integrated circuits; millimeter-wave integrated circuits; BiCMOS integrated circuits; CMOS technology; Copper; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; High speed optical techniques; Millimeter wave circuits; Production; Silicon germanium; BiCMOS; Heterojunction Bipolar Transistors (HBT); Silicon Germanium (SiGe); millimeter-wave circuits; optical communications;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on
Conference_Location :
Long Beach, CA
Print_ISBN :
0-7803-9764-9
Electronic_ISBN :
0-7803-9765-7
DOI :
10.1109/SMIC.2007.322759
