Title :
Characterization, modeling, and optimization of FinFET MOS varactors
Author :
Dehan, M. ; Parvais, B. ; Subramanian, V. ; Gustin, C. ; Loo, J. ; Mercha, A. ; Decoutere, S.
Author_Institution :
IMEC, Leuven
Abstract :
For the first time, nMOS varactors fabricated in FinFET technology were characterized and modeled at microwave frequency. The RF analysis is carried out as a function of the fin width. It is shown that the fin width has nearly no impact on the tuning range of the device, but on the quality factor (Q). Best Q´s are obtained for wide fin devices, mainly due to the reduction of the series resistances, and a higher intrinsic conductance
Keywords :
MOSFET; Q-factor; microwave field effect transistors; semiconductor device models; varactors; FinFET MOS varactors; FinFET technology; RF analysis; fin width; nMOS varactors; quality factor; wide fin devices; Capacitance measurement; Circuits; FinFETs; Fingers; MOS devices; Microwave frequencies; Microwave technology; Radio frequency; Tuning; Varactors; FinFET; MMICs; MOS Varactors; SOI;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on
Conference_Location :
Long Beach, CA
Print_ISBN :
0-7803-9764-9
Electronic_ISBN :
0-7803-9765-7
DOI :
10.1109/SMIC.2007.322761
