DocumentCode
1734353
Title
Characterization, modeling, and optimization of FinFET MOS varactors
Author
Dehan, M. ; Parvais, B. ; Subramanian, V. ; Gustin, C. ; Loo, J. ; Mercha, A. ; Decoutere, S.
Author_Institution
IMEC, Leuven
fYear
2007
Firstpage
28
Lastpage
31
Abstract
For the first time, nMOS varactors fabricated in FinFET technology were characterized and modeled at microwave frequency. The RF analysis is carried out as a function of the fin width. It is shown that the fin width has nearly no impact on the tuning range of the device, but on the quality factor (Q). Best Q´s are obtained for wide fin devices, mainly due to the reduction of the series resistances, and a higher intrinsic conductance
Keywords
MOSFET; Q-factor; microwave field effect transistors; semiconductor device models; varactors; FinFET MOS varactors; FinFET technology; RF analysis; fin width; nMOS varactors; quality factor; wide fin devices; Capacitance measurement; Circuits; FinFETs; Fingers; MOS devices; Microwave frequencies; Microwave technology; Radio frequency; Tuning; Varactors; FinFET; MMICs; MOS Varactors; SOI;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on
Conference_Location
Long Beach, CA
Print_ISBN
0-7803-9764-9
Electronic_ISBN
0-7803-9765-7
Type
conf
DOI
10.1109/SMIC.2007.322761
Filename
4117317
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