Title :
On the Excess Noise Factors and Noise Parameter Equations for RF CMOS
Author :
Cui, Yan ; Niu, Guofu ; Li, Ying ; Taylor, Stewart S. ; Liang, Qingqing ; Cressler, John D.
Author_Institution :
Dept. of Electr. & Comput. Eng., Auburn Univ., AL
Abstract :
This work examines the differences between the gd0 and gm referenced drain current excess noise factors in CMOS transistors as a function of channel length and bias. Using standard linear noisy two-port theory, we present a simple derivation of noise parameters. The results are compared with the well known Fukui´s empirical FET noise equations. Experimental data on a 0.18 mum CMOS process are measured and used to evaluate the simple model equations
Keywords :
CMOS integrated circuits; circuit noise; integrated circuit modelling; parameter estimation; radiofrequency integrated circuits; two-port networks; 0.18 micron; CMOS process; CMOS transistors; FET noise equations; RF CMOS; excess noise factors; linear noisy two-port theory; noise parameter equations; CMOS process; CMOS technology; Circuit noise; Equations; FETs; Microelectronics; Noise figure; Noise level; Radio frequency; Semiconductor device modeling; FET; noise parameters; noise representations;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on
Conference_Location :
Long Beach, CA
Print_ISBN :
0-7803-9764-9
Electronic_ISBN :
0-7803-9765-7
DOI :
10.1109/SMIC.2007.322764
