Title :
A new approach to modeling statistical variations in MOS transistors
Author :
Tulunay, Gulin ; Dundar, Gunhan ; Ataman, Atilla
Author_Institution :
Dept. of Electr. Eng., Nebraska Univ., Lincoln, NE, USA
fDate :
6/24/1905 12:00:00 AM
Abstract :
In this paper, a new methodology for modeling transistor mismatch in terms of systematic and random variations is proposed. The model is based on the variations in physical parameters. Although the methodology is the same, regardless of the technology used, the coefficients of the equations used in the model will vary due to the process. Results of the model, and a comparison between the proposed model and the well-known Pelgrom model are presented.
Keywords :
MOSFET; semiconductor device models; statistical analysis; MOS transistors; MOSFET; physical parameters; random variations; statistical variations modeling; systematic variations; total current mismatch; transistor mismatch modeling; Computational geometry; Digital integrated circuits; Equations; Fabrication; Integrated circuit technology; MOSFETs; Mirrors; Parasitic capacitance; Semiconductor device modeling; Transistors;
Conference_Titel :
Circuits and Systems, 2002. ISCAS 2002. IEEE International Symposium on
Print_ISBN :
0-7803-7448-7
DOI :
10.1109/ISCAS.2002.1009951
