Title :
Design of a wideband low noise amplifier for radio-astronomy applications
Author :
Hamaizia, Zahra ; Sengouga, Nouredine ; Yagoub, Mustapha C E
Author_Institution :
Lab. of Semicond. & Metallic Mater., Univ. of Mohamed Khider, Biskra, Algeria
Abstract :
In this work, the authors discuss the design of two low noise amplifiers (LNA) based on 1 μm gate-length pHEMT InP transistors and using two different topologies. Designed for radio astronomy applications, the first is a cascode circuit with a maximum gain of 15 dB and noise figure of 0.6 dB, while the second is a 2-stage cascaded amplifier with 27 dB of gain and 0.63 dB of noise figure. The two amplifiers exhibit an input 1 dB compression point of -22 dBm and -26 dBm respectively, and a third order input intercept point of -10 dBm and -5 dBm, respectively.
Keywords :
III-V semiconductors; MMIC amplifiers; high electron mobility transistors; indium compounds; low noise amplifiers; radioastronomy; wideband amplifiers; cascode circuit; gain 15 dB; gain 27 dB; noise figure 0.6 dB; noise figure 0.63 dB; pHEMT transistors; radioastronomy applications; wideband low noise amplifier; Gain; Integrated circuit modeling; Microwave amplifiers; Noise; Noise figure; Solid modeling;
Conference_Titel :
Symbolic and Numerical Methods, Modeling and Applications to Circuit Design (SM2ACD), 2010 XIth International Workshop on
Conference_Location :
Gammath
Print_ISBN :
978-1-4244-6816-4
DOI :
10.1109/SM2ACD.2010.5672362
