The multistable charge controlled memory effect in SOI-transistors at low temperatures

The operation of nMOS-transistors, made in SOI material, is investigated at low temperatures. A new phenomenon, the MCCM (multistable charge controlled memory) effect, is observed. Measurements demonstrating this MCCM effect are presented on nMOS transistors made in ZMR-SOI material. A physical model and an analytical model are given. Finally, some very promising applications of the MCCM-effect are highlighted, such as its use as a visible light sensor and as a very dense memory cell, with refresh times on the order of several hours