Influence of Unit Subcell Selection on Small- and Large-Signal Performance of SiGe Power HBTs

Author

Park, Jonghoo ; Jiang, Ningyue ; Ma, Zhenqiang

Author_Institution

Dept. of Electr. & Comput. Eng., Wisconsin-Madison Univ., Madison, WI

fYear

2007

Firstpage

64

Lastpage

67

Abstract

The influence of unit subcell selection on the small- and large-signal performance of SiGe power HBTs is investigated. It is found that at low input power levels SiGe power HBTs using compact subcells can provide better power performance than using loose ones due to less interconnect parasitics, which is consistent with the small-signal characteristics. At high input power levels, thermal effects dominate over the parasitics effects. As a result, the loose subcells can offer better power performance than the compact ones

Keywords

Ge-Si alloys; heterojunction bipolar transistors; interconnections; power bipolar transistors; SiGe; interconnect parasitics; large-signal performance; power HBT; power gain; small-signal performance; thermal effects; unit subcell selection; Drives; Germanium silicon alloys; Heterojunction bipolar transistors; Joining processes; Performance gain; Power engineering and energy; Power generation; Radio frequency; Silicon germanium; Thermal resistance; HBTs; RF; SiGe; large-signal; parasitic; power gain; power-added efficiency (PAE); small-signal; subcell; thermal effects;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on

Conference_Location

Long Beach, CA

Print_ISBN

0-7803-9764-9

Electronic_ISBN

0-7803-9765-7

Type

conf

DOI

10.1109/SMIC.2007.322770

Filename

4117326