Title :
Characterization of high electron mobility transistor under different temperatures
Author :
Tayel, Mazhar B. ; Rashed, Sameh A.
Author_Institution :
Fac. of Eng., Alexandria Univ., Egypt
Abstract :
The characteristics of high electron mobility transistor (HEMT) under different temperatures are studied. The study includes the effect of temperature on the Fermi level potential, sheet carrier concentration, and electron mobility. Also, the I/V characteristic is studied at different temperatures. Numerical results show that the drain current increases with increase in temperature.
Keywords :
Fermi level; electron mobility; high electron mobility transistors; polynomials; Fermi level potential; drain current; high electron mobility transistor; sheet carrier concentration; temperature effect; Educational institutions; Electron mobility; Equations; FETs; Gallium arsenide; HEMTs; MESFETs; MODFETs; MOSFETs; Temperature dependence;
Conference_Titel :
Radio Science Conference, 2003. NRSC 2003. Proceedings of the Twentieth National
Print_ISBN :
977-5031-75-3
DOI :
10.1109/NRSC.2003.1217378
