Title :
Model-Based Low-Frequency Noise Power Spectrum Density Fitting in SiGe HBTs
Author :
Qi, Peng ; Johansen, Jarle Andre
Author_Institution :
Dept. of Phys., Tromso Univ.
Abstract :
By using a model based predictive control system, we automatically fit the low-frequency noise (LFN) power spectrum density (PSD) of 375 GHZ silicon germanium heterojunction bipolar transistors (SiGe HBTs). The results show that this method not only offers a more efficient solution compared to the traditional fitting, but also locates the noise sources of LFN more accurately. In addition, it indicates the emergence of cutoff frequency within the low frequency range or other measurement problems which the model can not handle
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; semiconductor device noise; 375 GHz; HBT; SiGe; heterojunction bipolar transistors; model-based low-frequency noise power spectrum density fitting; Databases; Frequency; Germanium silicon alloys; Low-frequency noise; Noise generators; Noise level; Power system modeling; Predictive models; Silicon germanium; Testing; Low-Frequency noise; PSD fitting; SiGe HBT;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on
Conference_Location :
Long Beach, CA
Print_ISBN :
0-7803-9764-9
Electronic_ISBN :
0-7803-9765-7
DOI :
10.1109/SMIC.2007.322773
