DocumentCode
1734676
Title
Model-Based Low-Frequency Noise Power Spectrum Density Fitting in SiGe HBTs
Author
Qi, Peng ; Johansen, Jarle Andre
Author_Institution
Dept. of Phys., Tromso Univ.
fYear
2007
Firstpage
76
Lastpage
79
Abstract
By using a model based predictive control system, we automatically fit the low-frequency noise (LFN) power spectrum density (PSD) of 375 GHZ silicon germanium heterojunction bipolar transistors (SiGe HBTs). The results show that this method not only offers a more efficient solution compared to the traditional fitting, but also locates the noise sources of LFN more accurately. In addition, it indicates the emergence of cutoff frequency within the low frequency range or other measurement problems which the model can not handle
Keywords
Ge-Si alloys; heterojunction bipolar transistors; semiconductor device noise; 375 GHz; HBT; SiGe; heterojunction bipolar transistors; model-based low-frequency noise power spectrum density fitting; Databases; Frequency; Germanium silicon alloys; Low-frequency noise; Noise generators; Noise level; Power system modeling; Predictive models; Silicon germanium; Testing; Low-Frequency noise; PSD fitting; SiGe HBT;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on
Conference_Location
Long Beach, CA
Print_ISBN
0-7803-9764-9
Electronic_ISBN
0-7803-9765-7
Type
conf
DOI
10.1109/SMIC.2007.322773
Filename
4117329
Link To Document