A Dual-Gain ESD-protected LNA with Integrated Antenna Sensor for a Combined GALILEO and GPS front-end

Author

Alvarado, U. ; Rodríguez, N. ; Mendizábal, J. ; Berenguer, R. ; Bistué, G.

Author_Institution

Dept. of Electron. & Commun., CEIT, San Sebastian

fYear

2007

Firstpage

99

Lastpage

102

Abstract

This paper presents a dual-gain ESD protected LNA with integrated antenna sensor for a combined GPS and GALILEO front-end. The amplifier has been implemented using a standard 0.35mum SiGe BiCMOS process and the total power consumption is only 8 mA from a 3 V supply. It provides a power gain of 18 dB and a low noise figure of 3.3 dB working in the high gain mode of operation, which makes this LNA suitable for high sensitivity applications such as the new generation of positioning services

Keywords

Ge-Si alloys; Global Positioning System; electrostatic discharge; low noise amplifiers; 0.35 micron; 18 dB; 3 V; 3.3 dB; 8 mA; BiCMOS process; GALILEO; GPS front-end; SiGe; dual-gain ESD-protected LNA; high sensitivity; integrated antenna sensor; BiCMOS integrated circuits; Electrostatic discharge; Energy consumption; Gain; Germanium silicon alloys; Global Positioning System; Noise figure; Power amplifiers; Protection; Silicon germanium; Antenna sensor; Dual-gain; ESD protection; GALILEO; GPS; LNA; RF; high sensitivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on

Conference_Location

Long Beach, CA

Print_ISBN

0-7803-9764-9

Electronic_ISBN

0-7803-9765-7

Type

conf

DOI

10.1109/SMIC.2007.322779

Filename

4117335