Title :
A Dual-Gain ESD-protected LNA with Integrated Antenna Sensor for a Combined GALILEO and GPS front-end
Author :
Alvarado, U. ; Rodríguez, N. ; Mendizábal, J. ; Berenguer, R. ; Bistué, G.
Author_Institution :
Dept. of Electron. & Commun., CEIT, San Sebastian
Abstract :
This paper presents a dual-gain ESD protected LNA with integrated antenna sensor for a combined GPS and GALILEO front-end. The amplifier has been implemented using a standard 0.35mum SiGe BiCMOS process and the total power consumption is only 8 mA from a 3 V supply. It provides a power gain of 18 dB and a low noise figure of 3.3 dB working in the high gain mode of operation, which makes this LNA suitable for high sensitivity applications such as the new generation of positioning services
Keywords :
Ge-Si alloys; Global Positioning System; electrostatic discharge; low noise amplifiers; 0.35 micron; 18 dB; 3 V; 3.3 dB; 8 mA; BiCMOS process; GALILEO; GPS front-end; SiGe; dual-gain ESD-protected LNA; high sensitivity; integrated antenna sensor; BiCMOS integrated circuits; Electrostatic discharge; Energy consumption; Gain; Germanium silicon alloys; Global Positioning System; Noise figure; Power amplifiers; Protection; Silicon germanium; Antenna sensor; Dual-gain; ESD protection; GALILEO; GPS; LNA; RF; high sensitivity;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on
Conference_Location :
Long Beach, CA
Print_ISBN :
0-7803-9764-9
Electronic_ISBN :
0-7803-9765-7
DOI :
10.1109/SMIC.2007.322779
