A High Linearity 30-GHz Range SiGe Differential Power Amplifier IC

Author

Haque, T. ; Studtmann, G. ; Raman, S.

Author_Institution

Virginia Tech, Blacksburg, VA

fYear

2007

Firstpage

115

Lastpage

118

Abstract

A 30 GHz-range power amplifier (PA) IC for short-range point-to-point applications is presented in this paper. The monolithic PA design is fully differential and is fabricated in SiGe HBT technology for low-cost applications. Matching networks are based on distributed elements implemented in coplanar waveguide (CPW) structures. The PA is classed for high linearity and measured output power achieved is 11.9 dBm at the 1-dB compression point

Keywords

Ge-Si alloys; MMIC power amplifiers; bipolar MMIC; coplanar waveguides; radio links; 30 GHz; HBT technology; SiGe; coplanar waveguide; differential power amplifier IC; distributed elements; fully differential power amplifier; matching networks; short-range point-to-point communication; Application specific integrated circuits; Coplanar waveguides; Differential amplifiers; Germanium silicon alloys; Heterojunction bipolar transistors; High power amplifiers; Linearity; Power generation; Power measurement; Silicon germanium; Coplanar waveguides; millimeter-wave; point-to-point; power amplifier; silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on

Conference_Location

Long Beach, CA

Print_ISBN

0-7803-9764-9

Electronic_ISBN

0-7803-9765-7

Type

conf

DOI

10.1109/SMIC.2007.322783

Filename

4117339