High temperature and high sensitive NOx gas sensor with hetero-junction structure using laser ablation method

Author

Gao, Wei ; Shi, Liqin ; Khan, Shabbir A. ; Hasegawa, Yuki ; Katsube, T.

Author_Institution

Dept. of Inf. & Comput. Sci., Saitama Univ., Japan

Volume

2

fYear

2005

Firstpage

1215

Abstract

In order to develop a high temperature (200°C ∼ 400°C) and high sensitive NOx gas sensor, we developed a new structure of SiC-based hetero-junction device Pt/SnO₂/SiC/Ni and Pt/WO₃/SiC/Ni using a laser ablation method for the preparation of both metal (Pt) electrode and metal-oxide film. It was found that Pt/SnO₂/SiC/Ni sensor show higher sensitivity to NO₂ gas compared with the Pt/WO₃/SiC/Ni sensor, whereas the Pt/WO₃/SiC/Ni sensor had better sensitivity to NO gas. These results suggest that selective detection of NO and NO₂ gases may be obtained by choosing different metal oxide films.

Keywords

epitaxial layers; gas sensors; metal-semiconductor-metal structures; nickel; nitrogen compounds; platinum; pulsed laser deposition; silicon compounds; sputter deposition; tin compounds; tungsten compounds; 1 hour; 1 mm; 10 micron; 200 to 400 C; 3 min; 30 to 40 nm; 450 C; 50 to 60 nm; 800 C; NO; NO₂; NOx gas sensor; Pt-SnO₂-SiC-Ni; Pt-WO₃-SiC-Ni; annealing; circular gate electrode; epitaxial layer growth; heterojunction structure; laser ablation deposition; metal oxide film; quartz tube; silicon carbide; sputter deposition; thin film growth; Electrodes; Gas detectors; Gas lasers; Laser ablation; Laser theory; Semiconductor films; Sensor phenomena and characterization; Silicon carbide; Sputtering; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. The 13th International Conference on

Print_ISBN

0-7803-8994-8

Type

conf

DOI

10.1109/SENSOR.2005.1497297

Filename

1497297