New device architectures for nano-CMOS technology “walking” to end of the roadmap and the impact on RF/analog applications

Author

Ru Huang

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing

fYear

2008

Firstpage

7

Lastpage

7

Abstract

The paper will focus on the double gate devices and gate-all-round devices, as well as the related impact on RF/analog scaling. Three kinds of double gate devices with different gate positions and different junction profiles will be generally estimated, including one extension of FINFET, named as BOI FINFETs which can combine the advantages of both SOI FinFETs and bulk FinFETs.The paper will discuss the device fabrication with compatible process integration scheme and related issues for further improvement, as well as the unique quasi-one-dimensional transport property, analog/RF performance and reliability behavior of this potential device.

Keywords

CMOS integrated circuits; integrated circuit reliability; nanotechnology; BOI FINFET; RF/analog applications; SOI FinFET; analog/RF performance; bulk FinFET; device fabrication; double gate devices; gate all round devices; integration scheme; nano CMOS technology; quasi one dimensional transport property; reliability behavior; CMOS analog integrated circuits; CMOS technology; FinFETs; Leakage current; Legged locomotion; Linearity; Microelectronics; Nanoscale devices; Power dissipation; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2008. IWJT '08. Extended Abstracts - 2008 8th International workshop on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-1737-7

Type

conf

DOI

10.1109/IWJT.2008.4540006

Filename

4540006