DocumentCode
1735072
Title
Simulation on plasma doping for shallow junction formation
Author
Yu, Min ; Ji, Huihui ; Li, Ming ; Huang, Ru ; Zhang, Xing
Author_Institution
Inst. of Microelectron., Peking Univ., Beijing
fYear
2008
Firstpage
14
Lastpage
19
Abstract
Plasma doping (PD) is a potential shallow junction technology. Accurate simulation on PD is needed for further development and application. The simulation on PD with localized molecular method is presented in this paper. The verification of simulation results on dopant concentration profile by experimental data is shown. Simulation on FinFET doping is illustrated. The efficiency of side doping on fin structure is investigated.
Keywords
MOSFET; molecular dynamics method; plasma materials processing; semiconductor doping; FinFET doping; dopant concentration profile; fin structure; localized molecular method; plasma doping; shallow junction formation; side doping; CMOS technology; Computational modeling; Doping; FinFETs; Plasma density; Plasma devices; Plasma sheaths; Plasma simulation; Plasma sources; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Junction Technology, 2008. IWJT '08. Extended Abstracts - 2008 8th International workshop on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-1737-7
Electronic_ISBN
978-1-4244-1738-4
Type
conf
DOI
10.1109/IWJT.2008.4540008
Filename
4540008
Link To Document