DocumentCode
1735087
Title
Plasma doping (PD) for ultra-shallow junction
Author
Mizuno, B. ; Okashita, K. ; Nakamoto, K. ; Jin, C.G. ; Sasaki, Yutaka
Author_Institution
Ultimate Junction Technol. Inc., Moriguchi
fYear
2008
Firstpage
20
Lastpage
24
Abstract
Semiconductors have been successfully produced by the miniaturization of planar transistors and their transformation into a 3D structure. This innovation will realize ideal performance in electric devices. In this article, plasma doping combined with He plasma amorphization (He-PA) and several state-of-the-art rapid thermal processing is shown to be a technology for enabling the fabrication of miniaturized 2D devices and advanced 3D structures.
Keywords
amorphisation; rapid thermal processing; semiconductor doping; transistors; electric devices; helium plasma amorphization; miniaturization; planar transistors; plasma doping; rapid thermal processing; ultra-shallow junction; Annealing; Helium; Ion implantation; Plasma accelerators; Plasma density; Plasma devices; Plasma immersion ion implantation; Plasma materials processing; Plasma temperature; Semiconductor device doping;
fLanguage
English
Publisher
ieee
Conference_Titel
Junction Technology, 2008. IWJT '08. Extended Abstracts - 2008 8th International workshop on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-1737-7
Electronic_ISBN
978-1-4244-1738-4
Type
conf
DOI
10.1109/IWJT.2008.4540009
Filename
4540009
Link To Document