A Dual Band RFCMOS Amplifier Using Inductive Reactance Switching

Author

Ujiie, Ryuichi ; Sato, Hisayasu ; Ishihara, Noboru

Author_Institution

Graduate Sch. of Eng., Gunma Univ.

fYear

2007

Firstpage

131

Lastpage

134

Abstract

A dual-band RF CMOS amplifier using variable inductive reactance of LC resonant has been demonstrated. As inductive reactance of LC resonance can be changed by switching the resonant capacitance value, there are advantages that (i) desired inductive reactance can be easily controlled without a need for extra inductors requiring large chip area, and (ii) high reactance value can be obtained more than self inductance. To verify the validity, the dual-band amplifier has been designed and fabricated using a 0.13-mum CMOS process technology. We have succeeded in developing a dual-band amplifier which can switch the band dynamically from 2 to 4.6 GHz band

Keywords

CMOS integrated circuits; UHF amplifiers; UHF integrated circuits; microwave amplifiers; microwave integrated circuits; 0.13 micron; 2 to 4.6 GHz; CMOS process technology; LC resonance; dual band RF CMOS amplifier; inductive reactance switching; variable inductive reactance; CMOS process; CMOS technology; Capacitance; Dual band; Inductance; Inductors; Radio frequency; Radiofrequency amplifiers; Resonance; Switches; Amplifier; CMOS; LC resonance; RF; multiband;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on

Conference_Location

Long Beach, CA

Print_ISBN

0-7803-9764-9

Electronic_ISBN

0-7803-9765-7

Type

conf

DOI

10.1109/SMIC.2007.322798

Filename

4117343