COO reduction on polysilicon gate doping by beam current increase on batch-type implanters

Author

Izutani, Hisaki ; Takahashi, Yuji ; Harada, Mitsuaki

Author_Institution

SEN Corp., Saijo

fYear

2008

Firstpage

29

Lastpage

31

Abstract

The D-source, which ensures beam current increase in the LEX series, SEN´s high current batch-type implanter, has been developed for productivity improvement or COO reduction. The D-source can achieve beam current increase dramatically only by replacing the original source. Moreover, the D-source has longer source life time with easier maintenance. Performance of the D-source was reported in this paper.

Keywords

DRAM chips; batch processing (industrial); cost reduction; elemental semiconductors; integrated circuit economics; ion implantation; productivity; semiconductor doping; silicon; D-source performance; DRAM manufacturing; LEX series; Si; beam current; cost of ownership reduction; high current batch-type implanters; longer source life time; polysilicon gate doping; productivity improvement; Contamination; Costs; Doping; Electrodes; Ion beams; Ion sources; Manufacturing processes; Plasma sources; Productivity; Random access memory;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2008. IWJT '08. Extended Abstracts - 2008 8th International workshop on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-1737-7

Electronic_ISBN

978-1-4244-1738-4

Type

conf

DOI

10.1109/IWJT.2008.4540011

Filename

4540011