DocumentCode :
1735181
Title :
Gate drive for high-speed high-power I.G.B.T.s
Author :
Nguyen, M.N. ; Cassel, R.L. ; Delamare, J.L. ; Pappas, G.C.
Author_Institution :
Linear Accel. Center, Stanford Univ., CA, USA
fYear :
2001
Firstpage :
288
Abstract :
Summary form only given. A new gate drive for a high-voltage high-power IGBT has been developed for the SLAC NLC Solid State Induction Modulator. This paper describes the design and implementation of a driver that allows an IGBT rated at 800 A/3300 V to switch 3000 A at 2200 V in 3 /spl mu/S with a rate of current rise of more than 10000 A//spl mu/S, while still being short circuit protected. Issues regarding fast turn on, high de-saturation voltage detection, and low short circuit peak current will be presented. A novel approach is also used to counter the effect of unequal current sharing between parallel chips inside most high-power IGBT modules. It effectively reduces the collector-emitter peak current, and thus protects the IGBT from being destroyed during soft short circuit conditions at high di/dt.
Keywords :
driver circuits; insulated gate bipolar transistors; power semiconductor switches; power transistors; short-circuit currents; 2200 V; 3 mus; 3000 A; 3300 V; 800 A; SLAC NLC Solid State Induction Modulator; current switching; de-saturation voltage detection; gate drive; high-speed high-power IGBT; short-circuit protection; turn-on time; Driver circuits; Insulated gate bipolar transistors; Protection; Pulsed power supplies; Solid state circuits; Switches; Switching circuits; Thyratrons; Thyristors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Pulsed Power Plasma Science, 2001. IEEE Conference Record - Abstracts
Conference_Location :
Las Vegas, NV, USA
Print_ISBN :
0-7803-7141-0
Type :
conf
DOI :
10.1109/PPPS.2001.960941
Filename :
960941
Link To Document :
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