A methodology to assess the influence of Burn In related to long-term reliability of submicron CMOS transistors

Author

Holzhauser, S. ; Narr, A.

Author_Institution

Infineon Technol. AG, Munich, Germany

fYear

1999

fDate

6/21/1905 12:00:00 AM

Firstpage

1

Lastpage

5

Abstract

We have found a suitable methodology to establish the influence of Burn In (BI) stress on transistor lifetime with respect to decreasing transistor channel lengths and simultaneously increasing energy of accelerated electrons by higher electric fields during BI. This paper describes the details of the measurement method and a transformation model, which allows us to calculate the BI influence on transistor lifetime based on standard hot carrier stress (HCS) investigations. The new method results in a considerable reduction of measurement time and a suitable way to assess the transistor lifetime reduction due to the BI procedure

Keywords

MOSFET; hot carriers; life testing; semiconductor device reliability; accelerated electrons; burn-in stress; hot carrier stress; long-term reliability; measurement method; submicron CMOS transistors; transformation model; transistor channel length; transistor lifetime; Acceleration; Bismuth; Electric variables measurement; Electrons; Energy measurement; Hot carriers; Length measurement; Measurement standards; Stress measurement; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 1999. IEEE International

Conference_Location

Lake Tahoe, CA

Print_ISBN

0-7803-5649-7

Type

conf

DOI

10.1109/IRWS.1999.830550

Filename

830550