Accumulation-Mode MOS Varactors for RF CMOS Low-Noise Amplifiers

Author

Dunwell, Dustin ; Frank, Brian

Author_Institution

Dept. of Electr. & Comput. Eng., Queen´´s Univ.

fYear

2007

Firstpage

145

Lastpage

148

Abstract

A new RF model for an AMOS varactor is presented for 0.18mum CMOS. This model is the first reported for frequencies above 20 GHz in a standard CMOS technology. It does not rely on boundary conditions for different modes of operation and all component values in the model are calculated using clearly defined physical equations, making it easily adaptable to any varactor layout or even other CMOS technology nodes. The presented varactors are then implemented as neutralizing capacitances in a 23 GHz, two-stage, differential low-noise amplifier (LNA) design. Measured results of the fabricated LNA include a peak gain of 7.7 dB and a minimum noise figure of 4.5 dB at a frequency of approximately 23 GHz

Keywords

CMOS integrated circuits; MMIC amplifiers; differential amplifiers; low noise amplifiers; varactors; 0.18 micron; 23 GHz; 4.5 dB; 7.7 dB; CMOS technology; MMIC amplifiers; MOS varactors; differential low-noise amplifier; Boundary conditions; CMOS technology; Capacitance; Differential equations; Frequency measurement; Gain measurement; Low-noise amplifiers; Radio frequency; Semiconductor device modeling; Varactors;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on

Conference_Location

Long Beach, CA

Print_ISBN

0-7803-9764-9

Electronic_ISBN

0-7803-9765-7

Type

conf

DOI

10.1109/SMIC.2007.322802

Filename

4117347