Title :
Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique
Author :
Guan, Hao ; Li, M.-F. ; Zhang, Yaohui ; Cho, B.J. ; Jie, B.B. ; Xie, Joseph ; Wang, L.F. ; Yen, Andrew C. ; Sheng, George T T ; Dong, Zhong ; Weidan Li
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore
fDate :
6/21/1905 12:00:00 AM
Abstract :
The direct-current current-voltage (DCIV) method is presented to be an effective monitor for predicting plasma charging damage in ultra thin gate oxides. The DCIV experiments in deep submicron p-MOSFETs with 50 Å and 37 Å oxide and with various metal antenna structures clearly indicate a plasma damage region on the wafers. High initial interface trap density, rapid latent degradation and low charge to soft breakdown were found in the serious plasma damage region
Keywords :
MOSFET; electron traps; interface states; nondestructive testing; plasma materials processing; semiconductor device breakdown; semiconductor device measurement; semiconductor device testing; surface charging; 37 A; 50 A; charge to breakdown; deep submicron p-MOSFETs; direct-current current-voltage method; high initial interface trap density; metal antenna structures; nondestructive DCIV technique; plasma charging damage; plasma damage region; rapid latent degradation; soft breakdown; ultra thin gate oxide; CMOS technology; Electric breakdown; Large scale integration; MOSFET circuits; Plasma applications; Plasma density; Plasma devices; Plasma temperature; Semiconductor device manufacture; Voltage;
Conference_Titel :
Integrated Reliability Workshop Final Report, 1999. IEEE International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-5649-7
DOI :
10.1109/IRWS.1999.830554
