A Novel Isolation Scheme featuring Cavities in the Collector for a High-Speed 0.13μm SiGe:C BiCMOS Technology

Author

Choi, L.J. ; Van Huylenbroeck, Stefaan ; Donkers, J. ; van Noort, W.D. ; Piontek, A. ; Sibaja-Hernandez, Arturo ; Meunier-Beillard, P. ; Neuilly, F. ; Kunnen, E. ; Leray, P. ; Vleugels, F. ; Venegas, R. ; Hijzen, E. ; Decoutere, S.

Author_Institution

Interuniv. Microelectron. Center, Leuven

fYear

2007

Firstpage

158

Lastpage

161

Abstract

A novel isolation scheme is presented in this work, which uses oxide filled cavities in the collector to separate the extrinsic base and collector regions. When incorporated in our 0.13μm SiGe:C BiCMOS technology, a further improvement of the device RF performance is obtained, yielding devices with f_T/f_max values of 210/290GHz and 255/210GHz.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MIMIC; carbon; heterojunction bipolar transistors; isolation technology; 0.18 micron; 210 GHz; 255 GHz; 290 GHz; BiCMOS technology; MIMIC; SiGe:C; heterojunction bipolar transistor; BiCMOS integrated circuits; Capacitance; Continuous improvement; Etching; Germanium silicon alloys; Heterojunction bipolar transistors; Isolation technology; Microelectronics; Radio frequency; Silicon germanium; BiCMOS Technology; Heterojunction bipolar transistor (HBT); Silicon-Germanium (SiGe);

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on

Conference_Location

Long Beach, CA

Print_ISBN

0-7803-9764-9

Electronic_ISBN

0-7803-9765-7

Type

conf

DOI

10.1109/SMIC.2007.322805

Filename

4117350