DocumentCode
1735358
Title
Size Effects on DC and Low-Frequency-Noise Characteristics of Epitaxially Grown Raised-Emitter SiGe HBTs
Author
Washio, Katsuyoshi
Author_Institution
Central Res. Lab., Hitachi, Ltd., Tokyo
fYear
2007
Firstpage
162
Lastpage
165
Abstract
DC and low-frequency-noise characteristics of epitaxially grown raised-emitter (ERE) SiGe HBTs were investigated. Experimental results indicate unexpected emitter-size dependencies of both base current and low-frequency noise. An ERE SiGe HBT with a scaled emitter exhibits about 10 times smaller 1/f noise than a poly-Si emitter SiGe HBT
Keywords
1/f noise; Ge-Si alloys; epitaxial growth; heterojunction bipolar transistors; 1/f noise; SiGe; epitaxial growth; heterojunction bipolar transistor; low-frequency-noise; Annealing; Electrodes; Epitaxial growth; Germanium silicon alloys; Heterojunction bipolar transistors; Laboratories; Low-frequency noise; Microwave devices; Phase noise; Silicon germanium; SiGe; epitaxial growth; heterojunction bipolar transistor (HBT); low-frequency noise (1/f noise); polysilicon (poly-Si) emitter;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on
Conference_Location
Long Beach, CA
Print_ISBN
0-7803-9764-9
Electronic_ISBN
0-7803-9765-7
Type
conf
DOI
10.1109/SMIC.2007.322784
Filename
4117351
Link To Document