Title :
Conduction mechanisms in Cu/low-k interconnect
Author :
Bersuker, G. ; Blaschke, V. ; Choi, S. ; Wick, D.
Author_Institution :
SEMATECH, Austin, TX, USA
fDate :
6/21/1905 12:00:00 AM
Abstract :
Electrical characterization of Cu/low-k structures was performed to address intrinsic material properties. It was shown that ionic conduction due to contamination inherent to the dielectric was the leading cause of an intrinsic intra-metal line leakage current at low temperatures, while at elevated temperatures a contribution from electron current was detected. Dielectric and barrier layer parameters that control the conduction process were evaluated
Keywords :
copper; integrated circuit interconnections; ionic conductivity; leakage currents; Cu; Cu/low-k interconnect; barrier layer; conduction mechanisms; contamination; electron current; intrinsic intra-metal line leakage current; ionic conduction; Atherosclerosis; Conducting materials; Contamination; Dielectric materials; Dielectric measurements; Leak detection; Material properties; Semiconductor films; Temperature; Voltage;
Conference_Titel :
Integrated Reliability Workshop Final Report, 1999. IEEE International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-5649-7
DOI :
10.1109/IRWS.1999.830561
