Title :
A successful application of WLR fast test on Al via process optimisation
Author :
Liu, X. ; Lo, K.F. ; Guo, Qinglai ; Cai, J.
Author_Institution :
Reliability Eng. Group, Chartered Semicond. Manuf. Ltd., Singapore
fDate :
6/21/1905 12:00:00 AM
Abstract :
In this paper, a successful application of WLR fast electromigration (EM) test on Al via process optimization is presented. The impact of spin-on-glass (SOG) and pre sputter etch (PSE) on via performance is characterised by using standard wafer-level electromigration accelerated test (SWEAT). By eliminating the potential of SOG outgassing at the via and optimizing per sputter etch oxide loss (PSEOL), the optimization of the via process has been achieved with a 10% reduction in via resistance and a 6.5% improvement in yield
Keywords :
aluminium; electromigration; integrated circuit interconnections; integrated circuit reliability; integrated circuit testing; Al; SWEAT; WLR fast electromigration test; outgassing; pre sputter etch; spin-on-glass; sputter etch oxide loss; standard wafer-level electromigration accelerated test; via process optimization; Artificial intelligence; Etching; Foundries; Large Hadron Collider; Life estimation; Partial response channels; Petroleum; Semiconductor device testing; Vehicles; Wood industry;
Conference_Titel :
Integrated Reliability Workshop Final Report, 1999. IEEE International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-5649-7
DOI :
10.1109/IRWS.1999.830562
