Simulation of hot-carrier degradation using self-consistent solution of semiconductor energy-balance equations and oxide carrier transport equations

Author

Mukundan, S.K. ; Pagey, M.P. ; Schrimpf, R.D. ; Galloway, Kenneth F.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA

fYear

1999

fDate

6/21/1905 12:00:00 AM

Firstpage

92

Lastpage

97

Abstract

The Si-SiO₂ interface has been modelled as an abrupt heterojunction to simulate hot-carrier injection and transport in oxides of n- and p-channel MOSFETs. Energy balance equations in silicon and continuity equations in the oxide and silicon regions are solved consistently with trapping-rate equations in the oxide to simulate hot-carrier induced carrier trapping and interface trap generation

Keywords

MOSFET; electron traps; elemental semiconductors; hole traps; hot carriers; interface states; semiconductor device models; semiconductor-insulator boundaries; silicon; silicon compounds; MOSFETs; Si-SiO₂; Si-SiO₂ interface; abrupt heterojunction; continuity equations; energy balance equations; hot-carrier degradation; hot-carrier induced carrier trapping; hot-carrier injection; interface trap generation; oxide carrier transport equations; self-consistent solution; semiconductor energy-balance equations; simulation; trapping-rate equations; Degradation; Electrons; Hot carriers; Ionization; Semiconductor device doping;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 1999. IEEE International

Conference_Location

Lake Tahoe, CA

Print_ISBN

0-7803-5649-7

Type

conf

DOI

10.1109/IRWS.1999.830565

Filename

830565