New experimental findings on constant voltage and current soft-breakdown in ultra-thin oxides

Author

Brisbin, D. ; Chaparala, P.

Author_Institution

Keithley Instrum. Inc., Santa Clara, CA, USA

fYear

1999

fDate

6/21/1905 12:00:00 AM

Firstpage

102

Lastpage

107

Abstract

This paper compares constant current stress (CCS) and constant voltage stress (CVS) soft breakdown (SBD) measurement results in ultra-thin oxides (3.5 nm and 2.5 nm) and finds that a number of important correlation issues arise. The discrepancies between CCS and CVS SBD include the following: SBD event percentage is greater in CCS than CVS; CCS SBD region extends to higher stress currents; post-SBD noise is much greater in CCS than CVS. To understand these discrepancies the effect of available source power on CCS and CVS SBD is examined. In both 3.5 nm and 2.5 nm oxides it is found that the available source power has significant impact on SBD results

Keywords

MOS capacitors; semiconductor device breakdown; semiconductor device noise; semiconductor device reliability; 2.5 nm; 3.5 nm; MOS capacitors; constant current stress; constant voltage stress; correlation issues; post-SBD noise; soft-breakdown; source power; ultra-thin oxides; Breakdown voltage; Carbon capture and storage; Current measurement; Electric breakdown; Instruments; MOS capacitors; Noise measurement; Semiconductor device noise; Signal to noise ratio; Stress measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 1999. IEEE International

Conference_Location

Lake Tahoe, CA

Print_ISBN

0-7803-5649-7

Type

conf

DOI

10.1109/IRWS.1999.830567

Filename

830567