DocumentCode :
1735603
Title :
The sensitivity and correlation study on Jramp test and high-field constant-voltage stress test for WLR
Author :
Yuan Chen ; Li, Fetig ; Mason, Philip W. ; Ma, Yi ; Oates, Anthony S.
Author_Institution :
Bell Labs., Lucent Technol., Orlando, FL, USA
fYear :
1999
fDate :
6/21/1905 12:00:00 AM
Firstpage :
108
Lastpage :
110
Abstract :
Jramp test and high-field constant voltage stress test are evaluated for both quick reliability assessment and in-line production monitoring. Although the conducting mechanism for both tests are at the Fowler-Nordheim tunneling regime, high-field constant voltage stress test is found to be a more sensitive test than Jramp for in-line production monitor. This can be explained by the nature of Jramp itself based on analysis using accumulative law. By using the dual V-t model to extract reliability information, this paper shows that Jramp can be also used to compare the absolute oxide reliability for different technologies
Keywords :
integrated circuit reliability; integrated circuit testing; process monitoring; tunnelling; Fowler-Nordheim tunneling regime; Jramp test; WLR; absolute oxide reliability; accumulative law; conducting mechanism; correlation study; dual V-t model; high-field constant-voltage stress test; in-line production monitoring; quick reliability assessment; sensitivity; wafer level reliability; Life testing; Read only memory; Sensitivity analysis; Stress; Tail; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report, 1999. IEEE International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-5649-7
Type :
conf
DOI :
10.1109/IRWS.1999.830568
Filename :
830568
Link To Document :
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