An analytical model of drain induced barrier lowering effect for SiC MESFETs

Author

Cao, Quanjun ; Zhang, Yimen ; Zhang, Yuming

Author_Institution

Sch. of Microelectron., Xidian Univ., Xi´´an

fYear

2008

Firstpage

111

Lastpage

113

Abstract

Based on an analytical solution of the two-dimensional Poisson equation in the subthreshold region, the behavior of DIBL (drain induced barrier lowering) effect is investigated for short channel 4H-SiC MESFETs. An analytical model of accurate threshold voltage shift model for the asymmetry short channel 4H-SiC MESFET is presented and thus verified. According to the presented model, an analysis of threshold voltage for short channel device on the L/a(channel length/channel depth) ratio, drain applied voltage VDs and channel doping concentration ND is made, which provides a good basis for short channel device and circuit design.

Keywords

Poisson equation; Schottky gate field effect transistors; doping profiles; semiconductor device models; silicon compounds; wide band gap semiconductors; SiC; SiC MESFET; channel doping concentration; drain induced barrier lowering effect; two-dimensional Poisson equation; voltage shift model; Analytical models; Doping; FETs; MESFETs; Poisson equations; Radio frequency; Semiconductor materials; Semiconductor process modeling; Silicon carbide; Threshold voltage; 4H Silicon Carbide; Metal Semiconductor Field Effect Transistor; drain induced barrier lowering effect; short channel;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2008. IWJT '08. Extended Abstracts - 2008 8th International workshop on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-1737-7

Electronic_ISBN

978-1-4244-1738-4

Type

conf

DOI

10.1109/IWJT.2008.4540029

Filename

4540029