Analysis of evolution to and beyond quasi-breakdown in ultra-thin oxide and oxynitride

Author

Okandan, Murat ; Fonash, S. Tephen J ; Maiti, Bikas ; Tseng, H.H. ; Tobin, Hil

Author_Institution

Pennsylvania State Univ., University Park, PA, USA

fYear

1999

fDate

6/21/1905 12:00:00 AM

Firstpage

111

Lastpage

113

Abstract

The wearout and eventual failure of ultra-thin dielectrics have been of great interest since these dielectrics are critical in the reliability and performance of the state of the art CMOS technologies. This paper presents detailed analysis of transistors with 30 Å (measured by ellipsometry) oxide and oxynitride dielectrics as they evolve to and beyond quasi-breakdown due to FN stresses. Subsequent anneals and stresses were also performed to simulate the effects of further processing

Keywords

CMOS integrated circuits; annealing; ellipsometry; integrated circuit reliability; semiconductor device breakdown; 30 angstrom; CMOS technologies; FN stresses; annealing; ellipsometry; eventual failure; oxynitride; performance; quasi-breakdown; reliability; transistors; ultra-thin dielectrics; ultra-thin oxide; wearout; Analytical models; Argon; Art; Computational Intelligence Society; Degradation; Dielectric measurements; Scattering; Simulated annealing; Stress measurement; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 1999. IEEE International

Conference_Location

Lake Tahoe, CA

Print_ISBN

0-7803-5649-7

Type

conf

DOI

10.1109/IRWS.1999.830569

Filename

830569