• DocumentCode
    1735646
  • Title

    Defect evolution and C+/F+ co-implantation in millisecond Flash annealed ultra-shallow junctions

  • Author

    Cristiano, F. ; Bazizi, E.M. ; Fazzini, P.F. ; Paul, S. ; Lerch, W. ; Pakfar, A. ; Bourdon, H. ; Milesi, F. ; Boninelli, S. ; Duffy, R.

  • Author_Institution
    LAAS-CNRS, Univ. of Toulouse, Toulouse
  • fYear
    2008
  • Firstpage
    114
  • Lastpage
    119
  • Abstract
    In this paper, we investigate the evolution of extended defects during a msec Flash anneal after a PAI implant and show that during the ultra-fast temperature ramp-up and ramp-down, the basic mechanisms that control the evolution of defects are not modified with respect to the relatively slower RTA anneals. In addition, we show that junction depths below 15 nm can be achieved using a US J fabrication scheme based on the combination of impurity co-implantation with msec Flash anneal.
  • Keywords
    annealing; carbon; elemental semiconductors; fluorine; ion implantation; semiconductor device manufacture; semiconductor doping; semiconductor junctions; silicon; PAI implant; Si:C,F; US J fabrication scheme; defect evolution; extended defects; impurity co-implantation; millisecond flash annealed ultra-shallow junctions; ultra-fast temperature ramp-up; Fabrication; Impurities; Ion implantation; Microelectronic implants; Plasma devices; Plasma immersion ion implantation; Plasma temperature; Rapid thermal annealing; Silicon; Temperature control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Junction Technology, 2008. IWJT '08. Extended Abstracts - 2008 8th International workshop on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-1737-7
  • Electronic_ISBN
    978-1-4244-1738-4
  • Type

    conf

  • DOI
    10.1109/IWJT.2008.4540030
  • Filename
    4540030
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1735646