Title :
Defect evolution and C+/F+ co-implantation in millisecond Flash annealed ultra-shallow junctions
Author :
Cristiano, F. ; Bazizi, E.M. ; Fazzini, P.F. ; Paul, S. ; Lerch, W. ; Pakfar, A. ; Bourdon, H. ; Milesi, F. ; Boninelli, S. ; Duffy, R.
Author_Institution :
LAAS-CNRS, Univ. of Toulouse, Toulouse
Abstract :
In this paper, we investigate the evolution of extended defects during a msec Flash anneal after a PAI implant and show that during the ultra-fast temperature ramp-up and ramp-down, the basic mechanisms that control the evolution of defects are not modified with respect to the relatively slower RTA anneals. In addition, we show that junction depths below 15 nm can be achieved using a US J fabrication scheme based on the combination of impurity co-implantation with msec Flash anneal.
Keywords :
annealing; carbon; elemental semiconductors; fluorine; ion implantation; semiconductor device manufacture; semiconductor doping; semiconductor junctions; silicon; PAI implant; Si:C,F; US J fabrication scheme; defect evolution; extended defects; impurity co-implantation; millisecond flash annealed ultra-shallow junctions; ultra-fast temperature ramp-up; Fabrication; Impurities; Ion implantation; Microelectronic implants; Plasma devices; Plasma immersion ion implantation; Plasma temperature; Rapid thermal annealing; Silicon; Temperature control;
Conference_Titel :
Junction Technology, 2008. IWJT '08. Extended Abstracts - 2008 8th International workshop on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1737-7
Electronic_ISBN :
978-1-4244-1738-4
DOI :
10.1109/IWJT.2008.4540030
