New experimental findings on SILC and SBD of ultra-thin gate oxides

Author

Chen, M.G. ; Liu, Chum H. ; Lee, Ming T. ; Fu, K.Y.

Author_Institution

United Microelectron. Corp., Hsin-Chu City, Taiwan

fYear

1999

fDate

6/21/1905 12:00:00 AM

Firstpage

114

Lastpage

117

Abstract

It is widely believed that stress-induced leakage current (SILC) and soft breakdown (SBD) of ultra-thin (tox<5 nm) gate oxides are due to trap-assisted tunneling (TAT). In this paper, through the use of carrier separation method and annealing experiments, we argue that SILC is not only contributed by trap-assisted tunneling of conduction band electrons but also by trap-assisted tunneling of valence band electrons. It is proposed in this paper that the traps are mainly donor-like

Keywords

MOS integrated circuits; MOSFET; ULSI; electron traps; hole traps; integrated circuit reliability; leakage currents; semiconductor device breakdown; tunnelling; MOSFET; SBD; SILC; TDDB; ULSI; annealing; carrier separation method; conduction band electrons; donor-like traps; soft breakdown; stress-induced leakage current; time dependent dielectric breakdown; trap-assisted tunneling; ultra-thin gate oxides; valence band electrons; Charge carrier processes; Cities and towns; Electric breakdown; Electron traps; Leakage current; MOSFET circuits; Microelectronics; Stress; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 1999. IEEE International

Conference_Location

Lake Tahoe, CA

Print_ISBN

0-7803-5649-7

Type

conf

DOI

10.1109/IRWS.1999.830570

Filename

830570