Title :
New experimental findings on SILC and SBD of ultra-thin gate oxides
Author :
Chen, M.G. ; Liu, Chum H. ; Lee, Ming T. ; Fu, K.Y.
Author_Institution :
United Microelectron. Corp., Hsin-Chu City, Taiwan
fDate :
6/21/1905 12:00:00 AM
Abstract :
It is widely believed that stress-induced leakage current (SILC) and soft breakdown (SBD) of ultra-thin (tox<5 nm) gate oxides are due to trap-assisted tunneling (TAT). In this paper, through the use of carrier separation method and annealing experiments, we argue that SILC is not only contributed by trap-assisted tunneling of conduction band electrons but also by trap-assisted tunneling of valence band electrons. It is proposed in this paper that the traps are mainly donor-like
Keywords :
MOS integrated circuits; MOSFET; ULSI; electron traps; hole traps; integrated circuit reliability; leakage currents; semiconductor device breakdown; tunnelling; MOSFET; SBD; SILC; TDDB; ULSI; annealing; carrier separation method; conduction band electrons; donor-like traps; soft breakdown; stress-induced leakage current; time dependent dielectric breakdown; trap-assisted tunneling; ultra-thin gate oxides; valence band electrons; Charge carrier processes; Cities and towns; Electric breakdown; Electron traps; Leakage current; MOSFET circuits; Microelectronics; Stress; Tunneling; Voltage;
Conference_Titel :
Integrated Reliability Workshop Final Report, 1999. IEEE International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-5649-7
DOI :
10.1109/IRWS.1999.830570
