DocumentCode
1735674
Title
A High-Speed Structural Method for Testing Address Decoder Faults in Flash Memories
Author
Ginez, O. ; Portal, J.M. ; Aziza, H.
Author_Institution
CNRS, Aix-Marseille Univ., Marseille
fYear
2008
Firstpage
1
Lastpage
10
Abstract
The low-power consumption, the high integration density and the flexibility make Flash memories popular for portable electronic devices. Unfortunately, the aggressive evolution of technologies and the particular Flash memory process induce more and more complex faults in such memories. This paper addresses the main detractor of the Flash testing time, namely the test of Address decoder Faults (AFs). The first part of the paper is devoted to an analysis of the well known 5-steps Flash test flow also called 5-steps basic sequence. Based on this analysis, the critical points of such test strategy are shown from fault coverage and test time points of view. Next, these critical points are identified and associated to a particular pattern, namely the Diagonal `0´ pattern. In the fourth part of the paper, the functional fault models (AFs) given by [1] are transposed to a structural level (St_AFs). This structural transposition opens the way to new ad-hoc test solutions. According to this transposition, a structural-based method is proposed to avoid the Diagonal `0´ pattern in a global 5-steps basic sequence. This method states on a monitoring structure that performs the detection of St_AFs. Finally, the fault coverage of our solution is evaluated and compared to the Diagonal `0´ pattern. Our solution achieves a 100% coverage rate of AFs whatever the memory size whereas the Diagonal `0´ pattern has a fault coverage that never reaches 100% and decreases with the memory size.
Keywords
flash memories; integrated circuit testing; logic testing; low-power electronics; 5-steps basic sequence; ad-hoc test solutions; address decoder faults testing; aggressive evolution; diagonal ´0´ pattern; fault coverage; flash memories; flash test flow; flash testing time; functional fault models; high integration density; high-speed structural method; low-power consumption; memory size; portable electronic devices; structural transposition; time 4 s; time 41 ms; Decoding; Failure analysis; Flash memory; Monitoring; Nonvolatile memory; Portals; Random access memory; Silicon; Testing; Uniform resource locators;
fLanguage
English
Publisher
ieee
Conference_Titel
Test Conference, 2008. ITC 2008. IEEE International
Conference_Location
Santa Clara, CA
ISSN
1089-3539
Print_ISBN
978-1-4244-2402-3
Electronic_ISBN
1089-3539
Type
conf
DOI
10.1109/TEST.2008.4700633
Filename
4700633
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