Title : 
WLR monitoring stresses and suitable test structures for future product reliability targets
         
        
            Author : 
Martin, Andreas ; Kerber, Martin ; Diestel, Gunnar
         
        
            Author_Institution : 
Reliability Methodologies, Infineon Technol. AG, Munich, Germany
         
        
        
            fDate : 
6/21/1905 12:00:00 AM
         
        
        
        
            Abstract : 
The demands on gate oxide qualification and monitoring and their limits are discussed in detail. Methods are presented to demonstrate the customers reliability requirements through a combination of experiments and extrapolation. The motivation for this work was the visualisation of the discrepancy between today´s qualification and monitoring possibilities and tomorrow´s customers targets. Realistically, the effort to demonstrate the reliability targets experimentally is limited and will be too high for future reliability targets. The paper consists of two main parts, a discussion of an approach to assess today´s stringent failure rate targets through reliability measurements and the extrapolation of Weibull distributions. Steps towards building-in-reliability (BIR) are mentioned in this paper, when appropriate, but are not further discussed
         
        
            Keywords : 
Weibull distribution; integrated circuit reliability; integrated circuit testing; monitoring; WLR; Weibull distributions; building-in-reliability; customers reliability requirements; failure rate targets; gate oxide qualification; monitoring stresses; product reliability targets; test structures; Circuit testing; Circuits and systems; Condition monitoring; Extrapolation; Process design; Qualifications; Reliability engineering; Semiconductor device manufacture; Semiconductor device reliability; Stress;
         
        
        
        
            Conference_Titel : 
Integrated Reliability Workshop Final Report, 1999. IEEE International
         
        
            Conference_Location : 
Lake Tahoe, CA
         
        
            Print_ISBN : 
0-7803-5649-7
         
        
        
            DOI : 
10.1109/IRWS.1999.830572