Title :
Thin oxide limits
Author :
Vincent, Emmanuel ; Suehle, John S.
Author_Institution :
STMicroclectronics
fDate :
6/21/1905 12:00:00 AM
Keywords :
Acceleration; Carbon capture and storage; Circuit testing; Design for quality; Electric breakdown; High-K gate dielectrics; Laboratories; Physics; Semiconductor device manufacture; Semiconductor device noise;
Conference_Titel :
Integrated Reliability Workshop Final Report, 1999. IEEE International
Print_ISBN :
0-7803-5649-7
DOI :
10.1109/IRWS.1999.830575
