Title :
Extendibility of NiPt silicide to the 22-nm node CMOS technology
Author :
Ohuchi, Kazuya ; Lavoie, Christian ; Murray, Conal E. ; D´Emic, Chris P. ; Lauer, Isaac ; Chu, Jack O. ; Yang, Bin ; Besser, Paul ; Gignac, Lynne M. ; Bruley, John ; Singco, Gilbert U. ; Pagette, François ; Topol, Anna W. ; Rooks, Michael J. ; Bucchignano
Author_Institution :
Toshiba America Electron. Components Inc., IBM SRDC, Hopewell Junction, NY
Abstract :
This paper shows ultra-low contact resistivities with standard NiPt silicide process that can reach 1times10-8 Omega-cm2 for both n+ and p+ Si by using novel test structures of small silicided contact with varied areas from 20-nm diameter to 260-nm diameter by e-beam lithography fabricated on highly doped substrate made by conventional source drain implantation. It demonstrates that NiPt silicide can fulfill CMOS technology requirements down to the ITRS 22nm node.
Keywords :
CMOS integrated circuits; MIS structures; contact resistance; electron beam lithography; elemental semiconductors; ion implantation; nickel compounds; platinum compounds; semiconductor doping; silicon; CMOS; Cu-NiPtSi-SiN; NiPt silicide; Si; e-beam lithography; highly doped substrate; size 20 nm; size 260 nm; source drain implantation; ultra-low contact resistivity; CMOS technology; Conductivity; Contact resistance; Electrical resistance measurement; Electrodes; Electronic components; Silicides; Silicon on insulator technology; Testing; Voltage;
Conference_Titel :
Junction Technology, 2008. IWJT '08. Extended Abstracts - 2008 8th International workshop on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1737-7
Electronic_ISBN :
978-1-4244-1738-4
DOI :
10.1109/IWJT.2008.4540037
