Extendibility of NiPt silicide to the 22-nm node CMOS technology

Author

Ohuchi, Kazuya ; Lavoie, Christian ; Murray, Conal E. ; D´Emic, Chris P. ; Lauer, Isaac ; Chu, Jack O. ; Yang, Bin ; Besser, Paul ; Gignac, Lynne M. ; Bruley, John ; Singco, Gilbert U. ; Pagette, François ; Topol, Anna W. ; Rooks, Michael J. ; Bucchignano

Author_Institution

Toshiba America Electron. Components Inc., IBM SRDC, Hopewell Junction, NY

fYear

2008

Firstpage

150

Lastpage

153

Abstract

This paper shows ultra-low contact resistivities with standard NiPt silicide process that can reach 1times10^-8 Omega-cm² for both n⁺ and p⁺ Si by using novel test structures of small silicided contact with varied areas from 20-nm diameter to 260-nm diameter by e-beam lithography fabricated on highly doped substrate made by conventional source drain implantation. It demonstrates that NiPt silicide can fulfill CMOS technology requirements down to the ITRS 22nm node.

Keywords

CMOS integrated circuits; MIS structures; contact resistance; electron beam lithography; elemental semiconductors; ion implantation; nickel compounds; platinum compounds; semiconductor doping; silicon; CMOS; Cu-NiPtSi-SiN; NiPt silicide; Si; e-beam lithography; highly doped substrate; size 20 nm; size 260 nm; source drain implantation; ultra-low contact resistivity; CMOS technology; Conductivity; Contact resistance; Electrical resistance measurement; Electrodes; Electronic components; Silicides; Silicon on insulator technology; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2008. IWJT '08. Extended Abstracts - 2008 8th International workshop on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-1737-7

Electronic_ISBN

978-1-4244-1738-4

Type

conf

DOI

10.1109/IWJT.2008.4540037

Filename

4540037