Title :
16-26GHz Low Noise Amplifier for short-range automotive radar in a production SiGe:C technology
Author :
van der Heijden, Edwin ; Veenstra, H. ; Havens, R.
Author_Institution :
Philips Res., Eindhoven
Abstract :
Short-range radar is a technology that potentially can help to enhance road safety. Recently, in the USA as well as in Europe, frequency bands around 24GHz have been opened up for automotive radar applications. This paper describes a low noise amplifier (LNA) in a production 0.25mum SiGe:C BiCMOS IC technology. The input and output impedances are matched to 50Omega (single-ended). The LNA has 11dB gain and 4.2dB noise figure at 24GHz and has excellent performance for frequencies between 16-26GHz. The 0.45times0.55mm2 IC dissipates 20mW from a 3.3V supply
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; automotive electronics; low noise amplifiers; microwave amplifiers; road safety; road vehicle radar; 0.25 micron; 11 dB; 16 to 26 GHz; 20 mW; 3.3 V; 4.2 dB; 50 ohm; BiCMOS IC technology; Europe; SiGe:C; USA; automotive radar; car radar; input impedance; low noise amplifier; microwave circuits; output impedance; road safety; short-range radar; Automotive engineering; BiCMOS integrated circuits; Europe; Frequency; Impedance; Integrated circuit noise; Low-noise amplifiers; Production; Radar applications; Road safety; LNA; NF; car radar; microwave circuits; noise; receiver;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on
Conference_Location :
Long Beach, CA
Print_ISBN :
0-7803-9764-9
Electronic_ISBN :
0-7803-9765-7
DOI :
10.1109/SMIC.2007.322829
