DocumentCode :
1735850
Title :
Electron interactions with C/sub 2/F/sub 6/
Author :
Christophorou, L.G. ; Olthoff, J.K.
Author_Institution :
Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
fYear :
1997
Firstpage :
147
Abstract :
Summary form only given, as follows. Perfluoroethane (C/sub 2/F/sub 6/) is a man-made gas with many important applications in the semiconductor industry, in plasma chemistry and etching technologies, and in pulsed power switching. Knowledge of the interactions of slow electrons (/spl les/100 eV) is fundamental in optimizing the parameters involved in particular applications and in modeling industrial processes. We, therefore, have critically assessed and synthesized existing knowledge on electron interactions with C/sub 2/F/sub 6/. With the exception of electron attachment and electron impact ionization, the existing data on most of the fundamental electron-C/sub 2/F/sub 6/ interaction processes are limited. Nontheless, the present synthesis has led to a reasonable body of results which will be presented and discussed. These include (I) cross sections for total electron scattering, total and partial ionization, momentum transfer, integral elastic, vibrational inelastic, total dissociation, and electron attachment; and (ii) coefficients for electron attachment, ionization, effective ionization, and electron transport (drift velocity and lateral electron diffusion). Cross sections for electron scattering, momentum transfer, and dissociation of C/sub 2/F/sub 6/ into neutral fragments are especially needed.
Keywords :
electron impact dissociation; electron impact ionisation; ionisation; molecule-electron collisions; organic compounds; plasma applications; 100 eV; drift velocity; electron attachment; electron impact ionization; electron interactions; integral elastic cross sections; lateral electron diffusion; momentum transfer cross sections; parameter optimization; partial ionization; perfluoroethane; plasma chemistry; plasma etching; pulsed power switching; semiconductor industry; slow electrons; total dissociation cross sections; total electron scattering cross sections; total ionization; vibrational inelastic cross sections; Charge carrier processes; Electronics industry; Electrons; Ionization; Light scattering; NIST; Oscillators; Physics; Plasma properties; Plasma temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Science, 1997. IEEE Conference Record - Abstracts., 1997 IEEE International Conference on
Conference_Location :
San Diego, CA, USA
ISSN :
0730-9244
Print_ISBN :
0-7803-3990-8
Type :
conf
DOI :
10.1109/PLASMA.1997.604441
Filename :
604441
Link To Document :
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