DocumentCode
173597
Title
Influence of recombination velocity and doping on the photovoltaic properties of epitaxial silicon solar cells
Author
Perraki, Vasiliki
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Patras, Patras, Greece
fYear
2014
fDate
13-16 May 2014
Firstpage
943
Lastpage
948
Abstract
This work evaluates the variations of photovoltaic properties of epitaxial silicon solar cells, fabricated on UMG-Si substrates, as a function of the epilayer thickness for different recombination velocities and doping concentrations. Device simulation and optimization software, developed in a previous paper, has been extended and adapted to n+pp+ type epitaxial solar cells.
Keywords
elemental semiconductors; optimisation; semiconductor doping; silicon; solar cells; BSF; doping concentration; epilayer thickness; epitaxial silicon solar cells; low recombination velocities; ohmic contact; optimization software; optimum epilayer thickness; photocurrent density; photovoltaic properties; quantum efficiency curves; recombination velocity; solar spectrum; thick epilayers; thin epilayer; Doping; Epitaxial growth; Photoconductivity; Photovoltaic cells; Radiative recombination; Silicon; Substrates; doping concentration; epitaxial solar cells; quantum efficiency; recombination velocity;
fLanguage
English
Publisher
ieee
Conference_Titel
Energy Conference (ENERGYCON), 2014 IEEE International
Conference_Location
Cavtat
Type
conf
DOI
10.1109/ENERGYCON.2014.6850539
Filename
6850539
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