Title :
Influence of recombination velocity and doping on the photovoltaic properties of epitaxial silicon solar cells
Author :
Perraki, Vasiliki
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Patras, Patras, Greece
Abstract :
This work evaluates the variations of photovoltaic properties of epitaxial silicon solar cells, fabricated on UMG-Si substrates, as a function of the epilayer thickness for different recombination velocities and doping concentrations. Device simulation and optimization software, developed in a previous paper, has been extended and adapted to n+pp+ type epitaxial solar cells.
Keywords :
elemental semiconductors; optimisation; semiconductor doping; silicon; solar cells; BSF; doping concentration; epilayer thickness; epitaxial silicon solar cells; low recombination velocities; ohmic contact; optimization software; optimum epilayer thickness; photocurrent density; photovoltaic properties; quantum efficiency curves; recombination velocity; solar spectrum; thick epilayers; thin epilayer; Doping; Epitaxial growth; Photoconductivity; Photovoltaic cells; Radiative recombination; Silicon; Substrates; doping concentration; epitaxial solar cells; quantum efficiency; recombination velocity;
Conference_Titel :
Energy Conference (ENERGYCON), 2014 IEEE International
Conference_Location :
Cavtat
DOI :
10.1109/ENERGYCON.2014.6850539
