DocumentCode :
1736114
Title :
(Ultra)thin oxide breakdown(s), an overview
Author :
Vincent, Emmnnuel
Author_Institution :
Central R&D Labs., STMicroelectronics, Crolles, France
fYear :
1999
fDate :
6/21/1905 12:00:00 AM
Firstpage :
158
Lastpage :
166
Abstract :
This paper briefly reviews the main degradation mechanisms which occur in thin oxides during Fowler-Nordheim electron injection in order to better highlight the evolutions of the oxide failure modes when scaling down the oxide thickness. In particular, the impact of the oxide thickness scaling down on the breakdown phenomena is analyzed. Moreover, the quasi-breakdown phenomenon, a new failure mode observed in ultrathin oxides, is described and a methodology to rigorously address the ultrathin oxide reliability is given
Keywords :
electric breakdown; insulating thin films; semiconductor device reliability; Fowler-Nordheim electron injection; degradation mechanisms; oxide failure modes; oxide thickness; quasi-breakdown phenomenon; thin oxides; ultrathin oxide reliability; Capacitance; Carbon capture and storage; Cathode ray tubes; Dielectrics; Electrons; Large Hadron Collider; Stress; Tunneling; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report, 1999. IEEE International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-5649-7
Type :
conf
DOI :
10.1109/IRWS.1999.830587
Filename :
830587
Link To Document :
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