Strip monolithic telescopes

Author

Amorini, F. ; Cardella, G. ; Di Pietro, A. ; Fallica, G. ; Figuera, P. ; Morea, A. ; Musumarra, A. ; Papa, M. ; Pappalardo, G. ; Pinto, A. ; Rizzo, Francesco ; Tian, W. ; Tudisco, S. ; Valvo, G.

Author_Institution

Laboratori Nazionali del Sud, INFN, Catania, Italy

Volume

1

fYear

2004

Firstpage

780

Abstract

We present the characteristics of new monolithic silicon strip telescopes. By using suitable ion implantation techniques, the ΔE and residual energy stages of such telescopes have been integrated on the same silicon chip obtaining extremely thin ΔE stages of the order of 1 μm. This allows to obtain a very low charge identification energy threshold. The strip structure and the intrinsic characteristics of the detector enable us to build position sensitive detectors with good x-y resolution.

Keywords

ion implantation; particle detectors; silicon radiation detectors; telescopes; charge identification energy threshold; intrinsic characteristics; ion implantation techniques; monolithic silicon strip telescopes; position sensitive detectors; residual energy stages; silicon chip; silicon detectors; strip structure; x-y resolution; Conductivity; Detectors; Electrodes; Energy resolution; Preamplifiers; Prototypes; Silicon; Space technology; Strips; Telescopes;

fLanguage

English

Publisher

ieee

Conference_Titel

Instrumentation and Measurement Technology Conference, 2004. IMTC 04. Proceedings of the 21st IEEE

ISSN

1091-5281

Print_ISBN

0-7803-8248-X

Type

conf

DOI

10.1109/IMTC.2004.1351162

Filename

1351162