DocumentCode
1736223
Title
The CDFII silicon detector
Author
Thom, James A.
Author_Institution
Fermi Nat. Accelerator Lab., Batavia, IL, USA
Volume
1
fYear
2004
Firstpage
783
Abstract
The CDFII silicon detector consists of 8 layers of double-sided silicon micro-strip sensors totalling 722,432 readout channels, making it one of the largest silicon detectors in present use by an HEP experiment. After two years of data taking, we report on our experience operating the complex device. The performance of the CDFII silicon detector is presented and its impact on physics analyses is discussed. We have already observed measurable effects from radiation damage. These results and their impact on the expected lifetime of the detector are briefly reviewed.
Keywords
silicon radiation detectors; CDFII silicon detector; HEP experiment; SVXII ISL; complex device; double-sided silicon micro-strip sensors; measurable effects; physics analyses; radiation damage; readout channels; silicon paper number IM04-4544; Capacitors; Collaboration; Detectors; Gears; Large-scale systems; Maintenance; Optical noise; Physics; Silicon; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Instrumentation and Measurement Technology Conference, 2004. IMTC 04. Proceedings of the 21st IEEE
ISSN
1091-5281
Print_ISBN
0-7803-8248-X
Type
conf
DOI
10.1109/IMTC.2004.1351163
Filename
1351163
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