Design of a transmission gate based CMOS / molecular (CMOL) memory cell

Author

Barua, Mrinmoy ; Abid, Z.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Western Ontario, London, ON

fYear

2008

Firstpage

1

Lastpage

4

Abstract

CMOS/molecular hybrid (CMOL) based memory cells, offer high density, programmability and easy configuration, along with its long period data storage capabilities based on the nanodevice properties. Simulation results show that the exiting architecture needs to be modified to make it operational using the current nanodevice specifications, including ON and OFF voltages. A transmission gate based CMOL memory cell is proposed in this paper that solved the existing operational problems including voltage drop and suitably fit to operate with 45 nm CMOS technology. Area comparison shows that our design is compatible with existing CMOL and conventional CMOS SRAM memory cells.

Keywords

CMOS memory circuits; memory architecture; nanotechnology; storage management chips; CMOS; data storage; molecular memory cell; nanodevice properties; transmission gate; CMOS technology; Fabrication; Integrated circuit technology; MOS devices; MOSFET circuits; Memory; Molecular electronics; Nanoscale devices; Switches; Threshold voltage; CMOS/molecular hybrid (CMOL); Memory cell; Molecular switch; Nanodevices; Programmable molecules;

fLanguage

English

Publisher

ieee

Conference_Titel

Design and Technology of Integrated Systems in Nanoscale Era, 2008. DTIS 2008. 3rd International Conference on

Conference_Location

Tozeur

Print_ISBN

978-1-4244-1576-2

Electronic_ISBN

978-1-4244-1577-9

Type

conf

DOI

10.1109/DTIS.2008.4540205

Filename

4540205