A dual wideband CMOS LNA design for the 4G of wireless applications

Author

Amor, M. Ben ; Loulou, M. ; Quintanel, S. ; Pasquet, D.

Author_Institution

Dept. of Electr. Eng., Nat. Eng. Sch. of Sfax, Sfax

fYear

2008

Firstpage

1

Lastpage

4

Abstract

A dual wide band low noise amplifier for WiMAX (802.16a) standard is presented. The circuit is designed with AMS 0.35 mum CMOS process. This LNA is designed to cover the two frequency ranges for licensed and unlicensed bands of the WiMAX 2-4 GHz and 5-6 GHz. The proposed amplifier achieves a wide band input matching with Sn lower than -10 dB for all the band 2-6 GHz, a flat gain for the two bands; 13 db between 2-4 GHz and 10 dB between 5-6 GHz. The noise figure is around 3 dB for all the band and 2-6 GHz. The presented dual wide band LNA employs a Chebychev filter for input matching and an inductive shunt feedback for output matching. The power consumption is 62.5 mW under a power supply voltage of 2.5 V.

Keywords

4G mobile communication; CMOS integrated circuits; WiMax; integrated circuit design; 4G wireless applications; Chebychev filter; WiMAX 802.16a standard; dual wide band low noise amplifier; dual wideband CMOS LNA design; frequency 2 GHz to 4 GHz; frequency 5 GHz to 6 GHz; power 62.5 mW; power consumption; power supply voltage; unlicensed bands; voltage 2.5 V; Broadband amplifiers; CMOS process; Circuit noise; Frequency; Impedance matching; Low-noise amplifiers; Noise figure; Tin; WiMAX; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Design and Technology of Integrated Systems in Nanoscale Era, 2008. DTIS 2008. 3rd International Conference on

Conference_Location

Tozeur

Print_ISBN

978-1-4244-1576-2

Electronic_ISBN

978-1-4244-1577-9

Type

conf

DOI

10.1109/DTIS.2008.4540212

Filename

4540212